Transparent conducting oxides for photovoltaics: Manipulation of fermi level,work function and energy band alignment

413Citations
Citations of this article
839Readers
Mendeley users who have this article in their library.

Abstract

Doping limits, band gaps, work functions and energy band alignments of undoped and donor-doped transparent conducting oxides ZnO, In2O3, and SnO2 as accessed by X-ray and ultraviolet photoelectron spectroscopy (XPS/UPS) are summarized and compared. The presented collection provides an extensive data set of technologically relevant electronic properties of photovoltaic transparent electrode materials and illustrates how these relate to the underlying defect chemistry, the dependence of surface dipoles on crystallographic orientation and/or surface termination, and Fermi level pinning. © 2010 by the authors.

Cite

CITATION STYLE

APA

Klein, A., Körber, C., Wachau, A., Säuberlich, F., Gassenbauer, Y., Harvey, S. P., … Mason, T. O. (2010). Transparent conducting oxides for photovoltaics: Manipulation of fermi level,work function and energy band alignment. Materials, 3(11), 4892–4914. https://doi.org/10.3390/ma3114892

Register to see more suggestions

Mendeley helps you to discover research relevant for your work.

Already have an account?

Save time finding and organizing research with Mendeley

Sign up for free