Demonstration of boron arsenide heterojunctions: A radiation hard wide band gap semiconductor device

Abstract

B12 As2 /SiC pn heterojunction diodes based on the radiation-hard B12 As2 deposited on (0001) n -type 4H-SiC via chemical vapor deposition were demonstrated. The diodes exhibit good rectifying behavior with an ideality factor of 1.8 and a leakage current as low as 9.4× 10-6 A/ cm2. Capacitance-voltage measurements using a two-frequency technique showed a hole concentration of ∼1.8-2.0× 1017 cm-3 in B12 As 2 with a slight increase near the interface due to the presence of an interfacial layer to accommodate lattice mismatch. Band offsets between the B12 As2 and SiC were estimated to be ∼1.06 eV and 1.12 eV for conduction band and valance band, respectively. © 2010 American Institute of Physics.