Materials development to extend ArF lithography toward sub-20nm patterning

Abstract

New Materials for 193nm lithography extension are widely in need, especially for post 193nm immersion lithography technology. In this paper, we would report the performance of shrink material for trench patterns on litho-etch-litho-etch double patterning process. This material contains directed self-assemble properties and it succeeded in forming 23nm trench patterns. Besides, we would also report a sliming material which is able to make line patterns smaller and it succeeded in forming 19nm line patterns. Both new materials are promising in improving original photoresist pattern quality for enhancing double patterning processes. © 2012 CPST.