Plasmonic nanoparticle enhanced photocurrent in GaN/InGaN/GaN quantum well solar cells

Abstract

We demonstrate enhanced external quantum efficiency and current-voltage characteristics due to scattering by 100 nm silver nanoparticles in a single 2.5 nm thkck InGaAn quantum well photovoltaic device. Nanoparticle arrays were fabricated on the surface of the device using an anodic alumina template masking process. The Ag nanoparticles increase light scattering, light trapping, and carrier collection in the III-N semiconductor layers leaqding to enhancement of the external quantum efficiency by up to 54%. Additionally, the short-circuit current in cells with 200 nm p-GaN emitter regions is increased by 6% under AM 1.5 illumination. AFORS-Het simulation software results were used to prdict cell performance and optimize emitter layer thickness. © 2010 American Institute of Physics.