Rigorous modeling of carbon nanotube transistors

Abstract

Based on the non-equilibrium Green's function formalism the performance of carbon nanotube field-effect transistors has been studied. The effects of elastic and inelastic scattering on the device performance have been investigated. The results indicate that elastic scattering has a more detrimental effect on the device characteristics than inelastic scattering. Only for short devices the performance is not affected because of the long mean free path for elastic scattering. © 2006 IOP Publishing Ltd.