VUV laser photodesorption of hydrogen from Si(100)(2 × 1): H surface assisted by scanning tunneling microscope

Abstract

We report experiments of VUV laser photodesorption of hydrogen fromSi(100):H surfaces assisted by an UHV room temperature scanning tunnelingmicroscope (STM). The variation of isolated dangling bonds createdhas been measured for several fluences by a statistical analysisof the STM observation as a function of the irradiation dose. Structuralsurface modifications are discussed as well as the signature of photochemicalprocesses.