Blue electroluminescence from znse p-n junction light-emitting diodes

Abstract

Pure blue-light emission has been obtained from homoepitaxial ZnSe p-n junction light-emitting diodes (LEDs). Homoepitaxy is made on ZnSe substrates dry-etched by a BC13 plasma. High-quality p-n junctions consists; of N-doped p-type ZnSe formed by active-nitrogen doping and Cl-doped «-type ZnSe using ZnCl2 as a dopant source. Current- voltage characteristics of the LEDs exhibited good rectification properties. The peak energy of blue electroluminescence from the LEDs was 2.67 eV with a narrow full width at half-maximum of 49 meV. © 1991 The Japan Society of Applied Physics.