Journal Article

Molecular beam epitaxy growth and characterization of broken-gap (type II) superlattices and quantum wells for midwave-infrared laser diodes

  • Hasenberg T
  • Day P
  • Shaw E
  • et al.
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena (2000) 18(3) 1623-1627
DOI: 10.1116/1.591440
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Abstract

We have developed a broken-gap (type II) quantum well active region for midwave infrared interband lasers which exhibits a significantly increased Auger lifetime over that of previous designs.

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Hasenberg, T. C., Day, P. S., Shaw, E. M., Magarrell, D. J., Olesberg, J. T., Yu, C., … Flátte, M. E. (2000). Molecular beam epitaxy growth and characterization of broken-gap (type II) superlattices and quantum wells for midwave-infrared laser diodes. Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, 18(3), 1623–1627. https://doi.org/10.1116/1.591440

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