Eley-Rideal reaction of O+ with oxidized Si(100)

Abstract

Thin films of silicon oxide were used to examine the Eley-Rideal (ER) reaction of 10-60 eV O+ with the films. The O+ ions were found to be responsible for the scattering of O2-. The mechanism of the exothermic ER reaction was studied by molecular beam techniques, and the relation between the scattered and incident particle momenta was evaluated. The existence of hyperthermal atomic ions abstracting oxygen atoms from an oxide surface is discussed.