Atomistic Insights into Ultrafast SiGe Nanoprocessing

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Abstract

Controlling ultrafast material transformations with atomic precision is essential for future nanotechnology. Pulsed laser annealing (LA), inducing extremely rapid and localized phase transitions, is a powerful way to achieve this but requires careful optimization together with the appropriate system design. We present a multiscale LA computational framework that can simulate atom-by-atom the highly out-of-equilibrium kinetics of a material as it interacts with the laser, including effects of structural disorder. By seamlessly coupling a macroscale continuum solver to a nanoscale superlattice kinetic Monte Carlo code, this method overcomes the limits of state-of-the-art continuum-based tools. We exploit it to investigate nontrivial changes in composition, morphology, and quality of laser-annealed SiGe alloys. Validations against experiments and phase-field simulations as well as advanced applications to strained, defected, nanostructured, and confined SiGe are presented, highlighting the importance of a multiscale atomistic-continuum approach. Current applicability and potential generalization routes are finally discussed.

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APA

Calogero, G., Raciti, D., Ricciarelli, D., Acosta-Alba, P., Cristiano, F., Daubriac, R., … La Magna, A. (2023). Atomistic Insights into Ultrafast SiGe Nanoprocessing. Journal of Physical Chemistry C, 127(39), 19867–19877. https://doi.org/10.1021/acs.jpcc.3c05999

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