Growth of Large-Area High-Quality Graphene on Different Types of Copper Foil Preannealed under Positive Pressure H 2 Ambience

Abstract

Large-area high-quality graphene was synthesized on different types of copper foils preannealed under positive pressure H 2 atmosphere between 1 and 2 standard atmospheres. The prepared graphene showed good electrical conductivity, transmittance, and uniformity. The sheet resistance values of the grown monolayer graphene film were all about 500 and the transmittance was as high as 97.24%. The carrier mobility of the monolayer graphene film was around 2000-3000 cm 2 /(V s). Furthermore, the monolayer coverage could be more than 95.00% controlled by adjusting the process parameters. The properties of the four layer-superposed graphene film nearly reached that of the commercialized indium tin oxide (ITO) glasses, which showed that the prepared graphene could be well applied to the transparent conductive electrode. The obtained graphene film has been used to construct Si/graphene solar cells without an antireflection film, which showed energy conversion efficiency among 4.99-5.62%.