Investigation of Electrically Active Defects in SiC Power Diodes Caused by Heavy Ion Irradiation

Abstract

Deep-level transient spectroscopy (DLTS) and minority carrier transient spectroscopy (MCTS) are used to investigate electrically active defects in commercial silicon carbide (SiC) Schottky power diodes after heavy-ion microbeam irradiation at different voltages. The DLTS and MCTS spectra of pristine samples are analyzed and compared to devices showing or not signatures of single event leakage current (SELC) degradation. An additional peak labeled 'C' with an activation energy of 0.17 eV below the conduction band edge is observed in the DLTS spectra of a sample degraded with SELC.