Transport properties in chromium-doped Ti 2O 3thin films

Abstract

In this paper, we report the transport properties of Cr-doped Ti2 O3 thin films. The thin films were grown on α- Al2 O3 (012) substrates by pulsed-laser deposition. X-ray diffraction and transmission electron microscopy results show that the films are single corundum phase. All of (Crx Ti1-x) 2 O3 show semiconducting behavior. Without doping, pure Ti2 O3 thin films show positive magnetoresistance (MR) of 23% at 2 K. The MR behavior changed dramatically after doping with Cr. Sample (Cr0.1 Ti0.9) 2 O3 shows MR=-360% at 2 K. All of the Cr-doped films are ferromagnetic up to room temperature. © 2005 American Institute of Physics.