Abstract
This paper presents a Contact Resistive Random Access Memory (CRRAM) macro with an offset-compensated Sense amplifier for low-voltage operation. The proposed circuit aims to solve the variation and speed issues during low-voltage operations. A 256Kb test-chip was fabricated in TSMC 65nm technology. An improvement of 1.78x in read speed and 85.7% in offset was measured compared to conventional sensing methods, and the minimum operating voltage was as low as 0.3V.
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CITATION STYLE
Lee, A., Lin, C. C., Yang, T. C., & Chang, M. F. (2015). An embedded ReRAM using a small-offset sense amplifier for low-voltage operations. In 2015 International Symposium on VLSI Design, Automation and Test, VLSI-DAT 2015. Institute of Electrical and Electronics Engineers Inc. https://doi.org/10.1109/VLSI-DAT.2015.7114532
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