Resistivity reduction of nanostructured undoped zinc oxide thin films for Ag/ZnO bilayers using APCVD and sputtering techniques

Abstract

Nanostructured undoped zinc oxide (ZnO) thin films were deposited using atmospheric pressure chemical vapor deposition (APCVD) on glass substrates using zinc acetate dehydrate [C4H6O4Zn·2H2O, ZnAc] in less than 2 minutes for each sample. In order to reduce the resistivity of ZnO films, a very thin layer of Ag was deposited on top of the films via the sputtering method to reduce resistivity from 2.89 to 0.31 Ω.cm, using only a 30Å silver coating. Structural, electrical and optical properties of the resulting bilayers were also investigated. The results show a polycrystalline structure in higher temperatures compared to rather amorphous ones in lower temperatures such as 325°C. The XRD patterns of the optimum polycrystalline films were identified as a hexagonal wurtzite structure of ZnO with the (002) preferred orientation. Also, sheet resistance decreased from 17.8 MΩ/to 28.9 KΩ/for the temperatures of 325°C to 450°C, respectively. Based on the physical properties of undoped ZnO, substrate temperature is an important factor which affects the crystallite size and modifies electrical parameters. UV-vis measurements revealed a reduction in the transparency of the layers with increasing substrate temperature. A sharp cut-off was observed in ultraviolet regions at around 380 nm.