In this paper, We study the Zeeman spin-splitting in hole quantum wires oriented along the [011] and [011̄] crystallographic axes of a high mobility undoped (100)-oriented AlGaAs/GaAs heterostructure. Our data show that the spin-splitting can be switched 'on' (finite g*) or 'off' (zero g*) by rotating the field from a parallel to a perpendicular orientation with respect to the wire, and the properties of the wire are identical for the two orientations with respect to the crystallographic axes. We also find that the g-factor in the parallel orientation decreases as the wire is narrowed. This is in contrast to electron quantum wires, where the g-factor is enhanced by exchange effects as the wire is narrowed. This is evidence for a k -dependent Zeeman splitting that arises from the spin-| nature of holes. © IOP Publishing Ltd and Deutsche Physikalische Gesellschaft.
CITATION STYLE
Chen, J. C. H., Klochan, O., Micolich, A. P., Hamilton, A. R., Martin, T. P., Ho, L. H., … Wieck, A. D. (2010). Observation of orientation- and k-dependent zeeman spin-splitting in hole quantum wires on (100)-oriented AlGaAs/GaAs heterostructures. New Journal of Physics, 12. https://doi.org/10.1088/1367-2630/12/3/033043
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