Abstract
A (NH4)2Sx solution treatment technique was applied to a GaAs metal-semiconductor field-effect transistor (MESFET) to improve the electrical properties of the transistor. The gate leakage current of the MESFET remarkably decreased while the drain breakdown voltage doubled to 30 V with the (NH4)2Sx treatment. The (NH 4)2Sx treatment was found to effectively suppress the formation of donor-type defects at the GaAs surface and to increase the Schottky barrier height.
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CITATION STYLE
Lee, J. L., Kim, D., Maeng, S. J., Park, H. H., Kang, J. Y., & Lee, Y. T. (1993). Improvement of breakdown characteristics of a GaAs power field-effect transistor using (NH4)2Sx treatment. Journal of Applied Physics, 73(7), 3539–3542. https://doi.org/10.1063/1.352931
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