Abstract
A numerical model that accurately describes interband tunneling in backward diodes and broken-gap tunnel diode structures based on the InAs/GaSb material system is described. The model applies the transfer matrix method to discretized bias-dependent energy band profiles to calculate the transmission probability for tunneling. The model has been validated against experimental results, with good agreement in the current-voltage and curvature coefficient having been obtained for a range of hetero-structure backward diode and interband tunnel diode structures. © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
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CITATION STYLE
Shams, M. I. B., Xie, Y., Lu, Y., & Fay, P. (2013). An accurate interband tunneling model for InAs/GaSb heterostructure devices. Physica Status Solidi (C) Current Topics in Solid State Physics, 10(5), 740–743. https://doi.org/10.1002/pssc.201200624
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