Purification and preparation of pure SiC with silicon cutting waste

Abstract

Recycling silicon cutting waste (SCW) plays a pivotal role in reducing environmental impact and enhancing resource efficiency within the semiconductor industry. Herein SCW was utilized to prepare SiC and ultrasound-assisted leaching was investigated to purify the obtained SiC and the leaching factors were optimized. The mixed acids of HF/H2SO4 works efficiently on the removal of Fe and SiO2 due to that HF can react with SiO2 and Si and then expose the Fe to H+. The assistance of ultrasound can greatly improve the leaching of Fe, accelerate the leaching rate, and lower the leaching temperature. The optimal leaching conditions are HF–H2SO4 ratio of 1:3, acid concentration of 3 mol/L, temperature of 50 °C, ultrasonic frequency of 45 kHz and power of 210 W, and stirring speed of 300 rpm. The optimal leaching ratio of Fe is 99.38%. Kinetic analysis shows that the leaching process fits the chemical reaction-controlled model.