Modulating metallic conductive filaments via bilayer oxides in resistive switching memory

Abstract

Large fluctuations of key parameters in cation-based resistive random access memory (RRAM), which originate from stochastic growth of metallic conductive filaments, always impose a significant barrier to the practical application of memory devices. Here, we propose an ordinary bilayer oxide structure of Ag/TaOx/TaOy/Pt (x