Effect and extraction of series resistance in Al2O 3-InGaAs MOS with bulk-oxide trap

Abstract

The effect of parasitic series resistance in the accumulation region has been investigated under the framework of the distributed bulk-oxide trap model. It is shown that while the series resistance may be too small to impact the total capacitance, it can have a significant effect on the total conductance by adding a term ∞ω2. It leads to a proposal of an extraction method for series resistance. The enhanced bulk-oxide trap model with series resistance as well as dielectric leakage can explain the uncommon conductance frequency dispersion data for an Al2O3-InGaAs MOS capacitor with 2.5 nm thin Al2O3 layer. © The Institution of Engineering and Technology 2013.