Random dopant fluctuation‐induced variability in n‐type junctionless dual‐metal gate finfets

Abstract

We investigate the effect of random dopant fluctuation (RDF)‐induced variability in n‐type junctionless (JL) dual‐metal gate (DMG) fin field‐effect transistors (FinFETs) using a 3D computer‐aided design simulation. We show that the drain voltage (V DS ) has a significant impact on the electrostatic integrity variability caused by RDF and is dependent on the ratio of gate lengths. The RDF‐induced variability also increases as the length of control gate near the source decreases. Our simulations suggest that the proportion of the gate metal near the source to the entire gate should be greater than 0.5.