Abstract
The first demonstration of a rolled-up InAs quantum dot tube photodetector is reported, which is fabricated by the selective release of self-organised InAs/GaAs quantum dot heterostructures from the host substrate. The device exhibits a responsivity of ?66 mA/W and an external quantum efficiency of ?8% under 1064 nm excitation at 300 K. © The Institution of Engineering and Technology 2014.
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CITATION STYLE
APA
Dastjerdi, M. H. T., & Mi, Z. (2014). Nanoscale rolled-up InAs quantum dot tube photodetector. Electronics Letters, 50(9), 680–682. https://doi.org/10.1049/el.2013.4070
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