High quality SiO2 deposited at 80°C by inductively coupled plasma enhanced CVD for flexible display application

Abstract

In this article, we investigated the high quality SiO2 deposited at 80°C by inductively coupled plasma enhanced chemical vapor deposition (CVD). The interface trap density of 1.48 × 1010 cm -2 eV-1 and breakdown voltage of 5.6 MV/cm were realized successfully despite the low deposition temperature. Thin film transistors (TFTs) have been fabricated under 100°C by excimer laser annealing. The electron mobility can reach 225 cm2/V s. The interface density of SiO2 is comparable with that of thermal oxide. The high quality gate oxide is very suitable for fabricating high performance TFTs for large-area flexible displays on plastics. © 2010 The Electrochemical Society.