Abstract
Metal-organic (MO)CVD processes using three different precursors (Bi(tmhd)3, Bi(p-tol)3, and Bi(o-tol)3) have been investigated. Combined, thermal, and mass spectroscopic investigations have provided information on their thermal robustness during sublimation processes. In-situ Fourier-transform infrared (FTIR) measurements have allowed the monitoring of mass-transported precursors during MOCVD experiments. Temperature windows of 190-277°C, 170-270°C, and 150-220°C have proved suitable for the efficient vaporization of Bi(tmhd)3, Bi(p-tol)3, and Bi(o-tol)3, respectively, even though aryl precursors have proved to be more stable than β-diketonate during the sublimation and transport processes. Above 350°C, decomposition during the MOCVD processes has been observed for all the precursors. In the case of Bi(tmhd)3 and Bi(o-tol)3 it involves the ligand fragmentation, while for Bi(p-tol)3, dissociation of the intact aryl ring seems to occur. © 2005 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
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Bedoya, C., Condorelli, G. G., Finocchiaro, S. T., Di Mauro, A., Fragalà, I. L., Cattaneo, L., & Carella, S. (2005). Comparison of thermal and mass-transport properties of Bi(tmhd) 3, Bi(p-tol)3, and Bi(o-tol)3 MOCVD precursors. Chemical Vapor Deposition, 11(5), 261–268. https://doi.org/10.1002/cvde.200406355
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