Temperature dependence of 1/f noise mechanisms in silicon nanowire biochemical field effect transistors

Abstract

The 1/f noise of silicon nanowire biochemical field effect transistors is fully characterized from weak to strong inversion in the temperature range 100-300 K. At 300 K, our devices follow the correlated Δn-Δμ model. As the temperature is lowered, the correlated mobility fluctuations become insignificant and the low frequency noise is best modeled by the Δn -model. For some devices, evidence of random telegraph signals is observed at low temperatures, indicating that fewer traps are active and that the 1/f noise due to number fluctuations is further resolved to fewer fluctuators, resulting in a Lorentzian spectrum. © 2010 American Institute of Physics.