Study of Cu2ZnSn(S,Se)4 thin films for solar cell application

Abstract

Cu2ZnSn(S,Se)4 (CZTSSe) thin films with various Cu/Sn ratio in the films have been investigated to study the effect of compositional variation over the electrical, optical, and structural properties of the film. Surface morphology and grain size were found to be significantly influenced by the Cu/Sn ratio in the films and grain size was found better for the samples with moderate Cu/Sn ratio of 1.75. Irrespective of the growth condition and compositional variation, all the CZTSSe crystals show that grains are oriented along (112) direction as evident from the room temperature XRD data. Dark current-voltage (I-V) curve reveals that that sample with Cu/Sn 1.75 exhibits lowest leakage current, while sample with Cu/Sn 1.85 has the highest leakage current along with larger ideality factor indicating larger recombination centers in this film. Series resistance was also found to be higher in the sample with higher Cu-content. An anomaly in the optical band-gap has been explained with the presences of impurity phases and compositional inhomogeneities in the CZTSSe materials.