Low-temperature poly-silicon thin-film transistor developed without ion doping

Abstract

Low-temperature polycrystalline silicon (LTPS) thin-film transistors (TFTs) were developed without ion doping for lower cost. Aluminum (Al), a group 3 element, was used for the source and drain regions instead of ion doping. The effect of Al doping was verified through the Arrhenius plot to check the shift of the Fermi level. Al doping was applied for the metal-induced lateral crystallized polycrystalline silicon (Si) to achieve a p-channel LTPS TFT without ion doping. The TFT developed via Al doping exhibited 35.5 cm2/V s field effect mobility, a−3.7 V threshold voltage (Vth), a 4.0×105 on–off ratio, and a 0.7 V/dec subthreshold slope.