Adhesive Bonding of InP∕InGaAsP Dies to Processed Silicon-On-Insulator Wafers using DVS-bis-Benzocyclobutene

Abstract

The process of bonding InPInGaAsP dies to a processed silicon-on-insulator wafer using sub- 300 nm layers of DVS-bis-benzocyclobutene (BCB) was developed. The planarization properties of these DVS-bis-BCB layers were measured and an optimal prebonding die preparation and polymer precure are presented. Bonding quality and bonding strength are assessed, showing high-quality bonding with sufficient bonding strength to survive postbonding processing.The Electrochemical Society © 2006 The Electrochemical Society.