Double heterojunction AlGaAsP quaternary lasers

Abstract

Stimulated emission in AlGaAsP is demonstrated. Double heterojunction AlGaAsP lasers grown from Ga solution on GaAsP substrates exhibit 300°K thresholds as low as 104 A/cm2 (∼ 8450 Å) and shift ∼ 450 Å to shorter wavelength at 77°K. In spite of its more complicated crystalline structure, solution-grown AlGaAsP appears to exceed in quality vapor-grown GaAsP. © 1971 The American Institute of Physics.