Photocurrent studies of stress and aging in pentacene thin film transistors

Abstract

In this work the authors report on photocurrent spectroscopy analyses on pentacene thin film transistors that have been bias stressed and exposed to atmosphere over a long period of time (up to 80 days). They have studied the charge transport properties and the electronic excited state energy and distribution of these organic thin film devices. They also have identified the major excitonic and band gap transition energies and have investigated their quite different behavior following exposure to atmosphere or to bias stress. Different charge carrier distributions and trapping phenomena are proposed to describe the observed effects. © 2006 American Institute of Physics.