Journal Article

Near room temperature continuous wave lasing characteristics of GaInAsP/InP surface emitting laser

Electronics Letters (1993) 29(10) 913-914
DOI: 10.1049/el:19930609
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Abstract

The first near room temperature continuous wave lasing operation of a GalnAsP/lnP surface emitting laser has been achieved by employing a buried heterostructure and a novel MgO/Si heatsink mirror. A dramatic reduction of threshold current at room temperature and a circular narrow output beam were demonstrated. © 1993, The Institution of Electrical Engineers. All rights reserved.

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Baba, T., Yogo, Y., Suzuki, K., Koyama, F., & Iga, K. (1993). Near room temperature continuous wave lasing characteristics of GaInAsP/InP surface emitting laser. Electronics Letters, 29(10), 913–914. https://doi.org/10.1049/el:19930609

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