Fabrication and characterization of metal-ferroelectric (Pb Zr0.53 Ti0.47 O3) -insulator (Dy2 O3) -semiconductor capacitors for nonvolatile memory applications

Abstract

Metal-ferroelectric-insulator-semiconductor capacitors with Pb (Zr0.53, Ti0.47) O3 (PZT) ferroelectric layer and dysprosium oxide (Dy2 O3) insulator layer were fabricated and characterized. The measured memory window of 0.86 V was close to the theoretical value ΔW≈2 df Ec ≈0.78 V at a sweep voltage of 8 V. The size of the memory window as a function of PZT film thickness was discussed. The C-V flatband voltage shift (Δ VFB) as function of charge injection was also studied. An energy band diagram of the AlPZT Dy2 O3 p-Si system was proposed to explain the memory window and flatband voltage shift. The charge injection is mainly due to electrons. © 2006 American Institute of Physics.