Temperature dependence of the electrical properties of MOS devices constructed by sol gel deposited BaTiO3 films on p-Si

Abstract

The electrical properties of MOS devices with high-k insulating BaTiO 3 sol gel films fabricated onto p-Si substrates, were investigated by a variety of electrical techniques. The aim was to identify the temperature dependence of the electrical properties of the MOS devices. All samples exhibit a typical MOS behaviour. The density of interface states Dit was found to decrease with decreasing temperature and lies between 1 × 10 11 eV-1 cm-2 at near midgap and 3 × 1012 eV-1 cm-2 near the gap edges. The bulk-trapped charges were calculated to be between 40 and 120 nCb cm -2. The samples depicted high dielectric constants reaching values of 120. The results revealed that the sol-gel technique creates effective microelectronic devices. © 2005 IOP Publishing Ltd.