Electroluminescence enhancement in mid-infrared InAsSb resonant cavity light emitting diodes for CO2 detection

Abstract

In this work, we demonstrated a mid-infrared resonant cavity light emitting diode (RCLED) operating near 4.2 μm at room temperature, grown lattice-matched on a GaSb substrate by molecular beam epitaxy, suitable for CO2 gas detection. The device consists of a 1 λ-thick microcavity containing an InAs0.90Sb0.1 active region sandwiched between two high contrast, lattice-matched AlAs0.08Sb0.92/GaSb distributed Bragg reflector (DBR) mirrors. The electroluminescence emission spectra of the RCLED were recorded over the temperature range from 20 to 300 K and compared with a reference LED without DBR mirrors. The RCLED exhibits a strong emission enhancement due to resonant cavity effects. At room temperature, the peak emission and the integrated peak emission were found to be increased by a factor of ∼ 70 and ∼ 11, respectively, while the total integrated emission enhancement was ∼ × 33. This is the highest resonant cavity enhancement ever reported for a mid-infrared LED operating at this wavelength. Furthermore, the RCLED also exhibits a superior temperature stability of ∼ 0.35 nm/K and a significantly narrower (10×) spectral linewidth. High spectral brightness and temperature stable emission entirely within the fundamental absorption band are attractive characteristics for the development of next generation CO2 gas sensor instrumentation.