Abstract
The growth, structural and optical characterisation of dilute nitride alloys of InSb grown by plasma-assisted molecular beam epitaxy is presented. The layers were characterised by high-resolution X-ray diffraction indicating high crystalline quality and nitrogen incorporations up to 0.68%. Fouriertransform infrared absorption measurements reveal the position of the absorption edge to be a result of the competing effects of bandgap reduction (due to nitrogen incorporation and bandgap renormalisation) and Moss-Burstein band filling. A graph is presented. © 2007 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.
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CITATION STYLE
Jefferson, P. H., Buckle, L., Walker, D., Veal, T. D., Coomber, S., Thomas, P. A., … McConville, C. F. (2007). Growth and characterisation of high quality MBE grown lnNx Sb1-x. Physica Status Solidi - Rapid Research Letters, 1(3), 104–106. https://doi.org/10.1002/pssr.200701035
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