Effect of heat treatment temperature on preparation and characterization of CuInSe2 thin films

Abstract

The annealing temperature effects on the optical, structural, surface, and morphological characteristics of CIS thin films were examined. XRD study indicated that when the annealing temperature increases crystallinity and intensity peak increase. Both Raman and XRD measurements demonstrate that the CIS thin film’s crystalline quality and grain size rise as the annealing temperature rises. Annealing also enhanced grain size. With increasing annealing temperature, the optical band gap is reduced.