Solution-processed small molecule transistors with low operating voltages and high grain-boundary anisotropy

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Abstract

We present a new soluble pentacene derivative with ethyl substitutions in the 1,13,14,22 backbone positions to modulate the solubility and film forming properties of this material compared to triisopropylsilylethynyl (TIPS) pentacene. This permits reproducible production of molecularly highly ordered structures that feature average transistor mobilities in excess of 1 cm 2 V -1 s -1 depending on crystal orientation by careful selection of casting conditions. © 2012 The Royal Society of Chemistry.

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Yu, L., Li, X., Smith, J., Tierney, S., Sweeney, R., Kjellander, B. K. C., … Stingelin, N. (2012). Solution-processed small molecule transistors with low operating voltages and high grain-boundary anisotropy. Journal of Materials Chemistry, 22(19), 9458–9461. https://doi.org/10.1039/c2jm30893b

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