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Light-controlled resistive switching of ZnWO4 nanowires array

AIP Advances (2014) 4(7)
DOI: 10.1063/1.4891461
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Abstract

ZnWO4 nanowires array was prepared on the titanium substrate by a facile hydrothermal synthesis, in which the average length of ZnWO4 nanowires is about 2um and the diameter of individual ZnWO4 nanowire ranges from 50 to 70 nm. The bipolar resistive switching effect of ZnWO 4 nanowires array was observed. Moreover, the performance of the resistive switching device is greatly improved under white light irradiation compared with that in the dark. © 2014 Author(s).

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APA

Zhao, W. X., Sun, B., Liu, Y. H., Wei, L. J., Li, H. W., & Chen, P. (2014). Light-controlled resistive switching of ZnWO4 nanowires array. AIP Advances, 4(7). https://doi.org/10.1063/1.4891461

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