Low-power, subthreshold reference circuits for the space environment: Evaluated with γ-rays, X-rays, protons and heavy ions

Abstract

The radiation tolerance of subthreshold reference circuits for space microelectronics is presented. The assessment is supported by measured results of total ionization dose and single event transient radiation-induced effects under γ-rays, X-rays, protons and heavy ions (silicon, krypton and xenon). A high total irradiation dose with different radiation sources was used to evaluate the proposed topologies for a wide range of applications operating in harsh environments similar to the space environment. The proposed custom designed integrated circuits (IC) circuits utilize only CMOS transistors, operating in the subthreshold regime, and poly-silicon resistors without using any external components such as compensation capacitors. The circuits are radiation hardened by design (RHBD) and they were fabricated using TowerJazz Semiconductor’s 0.18 µm standard CMOS technology. The proposed voltage references are shown to be suitable for high-precision and low-power space applications. It is demonstrated that radiation hardened microelectronics operating in subthreshold regime are promising candidates for significantly reducing the size and cost of space missions due to reduced energy requirements.