Silicon light emitting diodes emitting over the 1.2-1.4 μm wavelength region in the extended optical communication band

Abstract

Here, we demonstrate bulk silicon light emitting diodes operating over the 1.2-1.35 μm range. This is achieved by the implantation of the rare earth thulium, incorporated in the trivalent Tm3+ state, into silicon p-n junctions. Light emitting diodes operating under forward bias have been obtained by codoping of boron to reduce the thermal quenching. Seven sharp lines are observed, corresponding to known internal Tm3+ transitions in the manifold from the H53 to the H63 ground states. This center, together with the basic 1.15 μm silicon emitters and Si:Er devices operating at 1.54 μm, now enables significant coverage of the extended (1.1-1.8 μm) optical communications band in silicon. © 2008 American Institute of Physics.