Influence of oxygen vacancies on the electronic structure of Hf O2 films

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Abstract

We investigated the unoccupied part of the electronic structure of the oxygen-deficient hafnium oxide (Hf O∼1.8) using soft x-ray absorption spectroscopy at O K and Hf N3 edges. Band-tail states beneath the unoccupied Hf 5d band are observed in the O K -edge spectra. Combined with ultraviolet photoemission spectrum, this indicates the non-negligible occupation of the Hf 5d state. However, Hf N3 -edge magnetic circular dichroism spectrum reveals the absence of a long-range ferromagnetic spin order in the oxide. Thus, the small amount of d electron gained by the vacancy formation does not show intersite correlation, contrary to a recent paper. © 2007 The American Physical Society.

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Cho, D. Y., Lee, J. M., Oh, S. J., Jang, H., Kim, J. Y., Park, J. H., & Tanaka, A. (2007). Influence of oxygen vacancies on the electronic structure of Hf O2 films. Physical Review B - Condensed Matter and Materials Physics, 76(16). https://doi.org/10.1103/PhysRevB.76.165411

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