Plasma deposition of amorphous silicon alloys from fluorinated gases

Abstract

Plasma deposition of a-SiGe, a-SiC and a-SiN alloys starting from fluorinated precursors is overviewed. The growth chemistries are examined on the basis of a unique chemisorption model. Some aspects on the role of F atoms in controlling the gas surface interactions and in determining the material properties are also evidenced.