Abstract
A new saw-like self-recovery Self-Aligned Nitride (SAN) memory cell is proposed and fabricated in 28nm high-k metal gate (HKMG) CMOS process for high-density logic NVM applications. The cell is operated with Source-Side Injection (SSI) for programming and band-to-band hot holes (BBHH) for erasing. Two effective self-heating recovery mechanisms are proposed and performed to maintain a stable On/Off read window after cycling stresses. Besides, the characteristic and reliability comparison of the SAN cell in other technology nodes, 90nm/45nm/32nm, are characterized to further verify the saw-like self-detrapping and self-recovery operation. The new 28nm HKMG SAN memory cell with the self-detrapping recovery results excellent and superior endurance performance and can provide a very promising solution for logic NVM in advanced technologies.
Cite
CITATION STYLE
Sung, Y. T., Lin, P. Y., Chen, J., Chang, T. S., King, Y. C., & Lin, C. J. (2014). A new saw-like self-recovery of interface states in nitride-based memory cell. In Technical Digest - International Electron Devices Meeting, IEDM (Vol. 2015-February, pp. 19.5.1-19.5.4). Institute of Electrical and Electronics Engineers Inc. https://doi.org/10.1109/IEDM.2014.7047084
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