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Very-fast timing performance of InGaAs/InAlAs single photon avalanche diode with dual multiplication layers

Optics InfoBase Conference Papers (2020) Part F181-CLEO-AT 2020
DOI: 10.1364/CLEO_AT.2020.AF1I.8
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Abstract

We present novel InGaAs/InAlAs single photon avalanche diodes with dual multiplication layers, large active diameters (240µm), high detection efficiency (32%), record small jitter (35ps), and low afterpulsing (<1% at 2µs hold-off time) at nearly 200K.

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Lee, Y. S., Chen, Y. J., Naseem, Wu, P. L., & Shi, J. W. (2020). Very-fast timing performance of InGaAs/InAlAs single photon avalanche diode with dual multiplication layers. In Optics InfoBase Conference Papers (Vol. Part F181-CLEO-AT 2020). Optica Publishing Group (formerly OSA). https://doi.org/10.1364/CLEO_AT.2020.AF1I.8

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