Double Gate PbS Quantum Dot Field-Effect Transistors for Tuneable Electrical Characteristics

Abstract

In this work colloidal quantum dots double gate transistors are introduced. A high-k (k = 43) relaxor ferroelectric polymer is used as a dielectric material for the top gate in a device where the other gate is fabricated from SiO2. The device in double gate configuration is characterized by reduced hysteresis in the transfer curves measured by separately sweeping the voltage of the SiO2 and of the polymer gate. Gating with the relaxor polymer leads to mobility values of μe = 1.1 cm2 V−1s−1 and μh = 6 × 10−3 cm2 V−1s−1 that exceed those extracted from the SiO2 gating: μe = 0.5 cm2 V−1s−1 and μh = 2 × 10−3 cm2 V−1s−1. Measurements under double gating conditions prove that the device works in a single channel mode that is delocalized over the whole film thickness. Double gating allows for shifting the threshold voltage into a desired position and also allows increasing the on-current of the devices.