Site-selective formation of Si nanocrystal in Si O2 by femtosecond laser irradiation and Al deoxidization effects

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Abstract

We have developed a robust method for fabricating Si nanoregions in silica glass using femtosecond laser processing. We attained a vivid formation of silicon-rich nanoregions site-selectively generated in Si O2 by irradiation of femtosecond laser pulses to the interface of a Si O2 substrate and deposited aluminum (Al) thin film, where the Al element acts as a gettering site for O atoms. Growth of high-density Si nanocrystals and amorphous Si was observed by transmission electron microscopy in the region that was multiply irradiated with the femtosecond laser. Furthermore, local annealing with a cw laser enhances the Si nanocrystal growth, which was determined by micro-Raman measurements. © 2008 American Institute of Physics.

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Uchida, N., Mikami, Y., Kintoh, H., Murakami, K., Fukata, N., Mitome, M., … Kitajima, M. (2008). Site-selective formation of Si nanocrystal in Si O2 by femtosecond laser irradiation and Al deoxidization effects. Applied Physics Letters, 92(15). https://doi.org/10.1063/1.2905289

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