Electrical properties of InAs 1-xSb x and InSb nanowires grown by molecular beam epitaxy

Abstract

Results of electrical characterization of Au nucleated InAs 1-xSb x nanowires grown by molecular beam epitaxy are reported. An almost doubling of the extracted field effect mobility compared to reference InAs nanowires is observed for a Sb content of x = 0.13. Pure InSb nanowires on the other hand show considerably lower, and strongly diameter dependent, mobility values. Finally, InAs of wurtzite crystal phase overgrown with an InAs 1-xSb x shell is found to have a substantial positive shift in threshold voltage compared to reference nanowires. © 2012 American Institute of Physics.