Trap-mediated bipolar charge transport in NiO/Ga2O3 p+-n heterojunction power diodes

Abstract

The construction of p-NiO/n-Ga2O3 heterojunction becomes a popular alternative to overcome the technological bottleneck of p-type Ga2O3 for developing bipolar power devices for practical applications, whereas the identification of performance-limiting traps and the bipolar transport dynamics are still not exploited yet. To this end, the fundamental correlation of carrier transport, trapping and recombination kinetics in NiO/β-Ga2O3 p+-n heterojunction power diodes has been investigated. The quantitative modeling of the temperature-dependent current-voltage characteristics indicates that the modified Shockley-Read-Hall recombination mediated by majority carrier trap states with an activation energy of 0.64 eV dominates the trap-assisted tunneling process in the forward subthreshold conduction regime, while the minority carrier diffusion with near-unity ideality factors is overwhelming at the bias over the turn-on voltage. The leakage mechanism at high reverse biases is governed by the Poole-Frenkel emissions through the β-Ga2O3 bulk traps with a barrier height of 0.75 eV, which is supported by the identification of majority bulk traps with the energy level of EC − 0.75 eV through the isothermal capacitance transient spectroscopic analysis. These findings bridge the knowledge gap between bipolar charge transport and deep-level trap behaviors in Ga2O3, which is crucial to understand the reliability of Ga2O3 bipolar power rectifiers. [Figure not available: see fulltext.]