Synthesis and electrical conductivity of silicon carbide fiber as electronic semiconductor

Abstract

Silicon carbide shows advantage characteristics to be used as electronic devices that operated in extreme conditions. It potentially improves many limitations compared to the silicon. The applications of SiC are used in high power, high frequency, and high- temperature conditions. Intrinsic semiconductor properties of SiC has high thermal conductivity, mechanically and chemically stable and excellent resistance to the radiation. In this research, SiC fiber was synthesized from polycarbosilane polymer precursor (PCS) that solved in N, N-dimethylformamide (DMF), and toluene. This solution was processed using electrospinning to form fibers. The fibers were cured at 200 °C and continued with pyrolyzed varied at 1200, 1300 and 1400 °C for 1 hour. The fiber's electrical conductivity was carried out by LCR meter. The electrical conductivity for the lower frequency at 62.36 Hz showed 7280 nS, achieved by the fibers that pyrolyzed at 1200 °C. For high frequency at 100 kHz showed the fibers pyrolyzed at 1400 °C were acquired for 12400 nS.m-1 for its electrical conductivity. The value of its band gap based on the Kubelka Munk Equation was take placed for fibers that showed significant value at high frequency using UV-Vis DRS. The band gap value was achieved at 2.56 eV.